Method for manufacturing gallium nitride single crystalline substrate using self-split
US7723217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2008 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Dec 10, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.