Method for manufacturing semiconductor device, and substrate processing apparatus
US7723245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2005 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Sep 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured.A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.