Zirconium oxide based capacitor and process to manufacture the same

US7723771B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Tim Boescke · Dresden, DE
• Uwe Schroeder · Fishkill, US

Key dates

• Filing date: Mar 30, 2007
• Grant date: May 25, 2010
• Expiry date: Jun 18, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A capacitor structure comprises a first and a second electrode of conducting material. Between the first and second electrodes, an atomic layer deposited dielectric film is disposed, which comprises zirconium oxide and a dopant oxide. Herein, the dopant comprises an ionic radius that differs by more than 24 pm from an ionic radius of zirconium, while the dielectric film comprises a dopant content of 10 atomic percent or less of the dielectric film material excluding oxygen. A process for fabricating a capacitor comprises a step of forming a bottom electrode of the capacitor. On the bottom electrode, a dielectric film comprising zirconium oxide is deposited, and a step for introducing a dopant oxide into the dielectric film performed. On the dielectric structure, a top electrode is formed. The dopant comprises an ionic radius that differs by more than 24 pm from an ionic radius of zirconium, whereas the dielectric structure deposited comprises a dopant content of 10 atomic percent or less of the deposited material excluding oxygen.