Semiconductor device and method for making same

US7723777B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• John Power · Kilmacthomas, IE
• Mayk Roehrich · Dresden, DE
• Martin Stiftinger · Stockdorf, DE
• Robert Strenz · Radebeul, DE

Key dates

• Filing date: Aug 12, 2008
• Grant date: May 25, 2010
• Expiry date: Aug 12, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/40

Abstract

One or more embodiments, relate to a field effect transistor, comprising: a substrate; a gate stack disposed over the substrate, the gate stack comprising a gate electrode overlying a gate dielectric; and a sidewall spacer may be disposed over the substrate and laterally disposed from the gate stack, the spacer comprising a polysilicon material.