Electrolyte transistor

US7724499B2 · kind B2 · utility

Assignee

• Industrial Technology Research Institute · TW

Inventor

• Cha-Hsin Lin · Tainan, TW

Key dates

• Filing date: Apr 28, 2008
• Grant date: May 25, 2010
• Expiry date: Sep 9, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/481

Abstract

Electrolyte transistor including a gate structure, two sources/drains, an electrolyte layer and a buried conductive layer is provided. The gate structure including a gate dielectric layer and a gate is located above a substrate. The two sources/drains are separated from each other and located above the substrate on each side the gate structure. The electrolyte layer is located between and contacts the two sources/drains, and located between and contacts the gate structure and the substrate. The buried conductive layer is located between the electrolyte layer and the substrate. The electrolyte layer between the two sources/drains includes a channel. The conductivity of the electrolyte layer between the two sources/drains is changed by a redox reaction, so as to turn on or turn off the channel.