Patent · US Active

Capacitive divider sensing of memory cells

US7724564B2 · kind B2 · utility

16Cited by

19References

29Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Jennifer E. Taylor · Boise, US
John D. Porter · Meridian, US

Key dates

Filing date	May 2, 2008
Grant date	May 25, 2010
Priority date	—
Expiry date	Nov 3, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/5634
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present disclosure includes devices and methods for sensing resistance variable memory cells. One device embodiment includes at least one resistance variable memory cell, and a capacitive divider configured to generate multiple reference levels in association with the at least one resistance variable memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.