Apparatus and method for small signal sensing in an SRAM cell utilizing PFET access devices
US7724565B2 · kind B2 · utility
17Cited by
6References
5Claims
0Family size
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Key dates
| Filing date | Sep 6, 2007 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Apr 17, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A design structure embodied in a machine readable medium used in a design process for small signal sensing during a read operation of a static random access memory (SRAM) cell includes coupling a pair of complementary sense amplifier data lines to a corresponding pair of complementary bit lines associated with the SRAM cell, and setting a sense amplifier so as to amplify a signal developed on the sense amplifier data lines, wherein the bit line pair remains coupled to the sense amplifier data lines at the time the sense amplifier is set.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.