HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby
US7727333B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2007 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Dec 7, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is transported to the accumulation zone where it cools and condenses into a source material having an indium-containing compound. The source material is collected in the accumulation zone and evaporated. Vapor or gas resulting from evaporation of the source material forms reacts with a second reactive gas in the growth zone for growth of ternary and quaternary materials including indium gallium nitride, indium aluminum nitride, and indium gallium aluminum nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.