Oleg Kovalenkov
8Patents
4h-index
16Co-inventors
50Inventor score
Filing activity: Jul 18, 2003 → Jun 14, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6955719B2 | Manufacturing methods for semiconductor devices with multiple III-V material layers | Electricity | 44 | Expired |
| US7727333B1 | HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby | Chemistry; Metallurgy | 12 | Active |
| US8992684B1 | Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials | Chemistry; Metallurgy | 5 | Active |
| US9023673B1 | Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions | Electricity | 5 | Active |
| US8673074B2 | Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) | Electricity | 4 | Active |
| US9577143B1 | Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner | Chemistry; Metallurgy | 4 | Active |
| US9416464B1 | Apparatus and methods for controlling gas flows in a HVPE reactor | Electricity | 3 | Active |
| US8647435B1 | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.