Process for formation of three-dimensional photonic crystal
US7727410B2 · kind B2 · utility
1Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2007 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Apr 2, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/136
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for forming a three-dimensional photonic crystal comprises the steps of providing a base material having a first face and a second face adjoining to each other at a first angle, forming a first mask on the first face, dry-etching the first face in a direction at a second angle to the first face to remove a portion of the base material not protected by the first mask, forming a second mask on the second face, and dry-etching the second face in a direction at a third angle to the second face to remove a portion of the base material not protected by the second mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.