Forming ferroelectric polymer memories

US7727777B2 · kind B2 · utility

Inventors

• Ebrahim Andideh · Portland, US
• Mark Isenberger · Corrales, US
• Michael J. Leeson · Portland, US
• Mani Rahnama · Beaverton, US

Key dates

• Filing date: May 31, 2002
• Grant date: Jun 1, 2010
• Expiry date: Apr 15, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49156
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

In accordance with some embodiments, a ferroelectric polymer memory may be formed of a plurality of stacked layers. Each layer may be separated from the ensuing layer by a polyimide layer. The polyimide layer may provide reduced layer-to-layer coupling, and may improve planarization after the lower layer fabrication.