Exponentially doped layers in inverted metamorphic multijunction solar cells
US7727795B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2008 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Aug 7, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mis-matched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.