Method of producing an integrated circuit having a capacitor with a supporting layer

US7727837B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Ulrike Gruening-von Schwerin · Munich, DE
• Rolf Weis · Dresden, DE
• Wolfgang Henke · Kempen, DE
• Odo Wunnicke · Dresden, DE
• Till Schloesser · Dresden, DE
• Florian Schnabel · Ehrenkirchen, DE
• Wolfgang Mueller · Garden City, US

Key dates

• Filing date: Jan 31, 2007
• Grant date: Jun 1, 2010
• Expiry date: Jan 4, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/318

Abstract

A method of forming an integrated circuit having a capacitor is disclosed. In one embodiment, the method includes forming a capacitor element with a first electrode, a dielectric layer and a second electrode. The capacitor element is formed using a support layer.