Method for controlling conductivity of Ga2O3single crystal
US7727865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2005 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Jan 14, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/937
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To provide a method of controlling a conductivity of a Ga2O3 system single crystal with which a conductive property of a β-Ga2O3 system single crystal can be efficiently controlled.The light emitting element includes an n-type β-Ga2O3 substrate, and an n-type β-AlGaO3 cladding layer, an active layer, a p-type β-AlGaO3 cladding layer and a p-type β-Ga2O3 contact layer which are formed in order on the n-type β-Ga2O3 substrate. A resistivity is controlled to fall within the range of 2.0×10−3 to 8×102 Ωcm and a carrier concentration is controlled to fall within the range of 5.5×1015 to 2.0×1019/cm3 by changing a Si concentration within the range of 1×10−5 to 1 mol %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.