Non-polar and semi-polar GaN substrates, devices, and methods for making them

US7727874B2 · kind B2 · utility

Assignee

• Kyma Technologies, Inc. · US

Inventors

• Andrew D. Hanser · Raleigh, US
• Edward A. Preble · Raleigh, US
• Lianghong Liu · Greenville, US
• Terry Lee Clites · Raleigh, US
• Keith R. Evans · Raleigh, US

Key dates

• Filing date: Sep 12, 2008
• Grant date: Jun 1, 2010
• Expiry date: Sep 12, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02433
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation.