Kyma Technologies, Inc.
11Patents
10Active
11Granted
47Portfolio score
Filing activity: Nov 30, 2001 → Jun 15, 2015 · 5 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6692568B2 | Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon | Electricity | 106 | Expired |
| US7727874B2 | Non-polar and semi-polar GaN substrates, devices, and methods for making them | Electricity | 21 | Active |
| US7777217B2 | Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same | Electricity | 13 | Active |
| US7897490B2 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Electricity | 11 | Active |
| US8435879B2 | Method for making group III nitride articles | Electricity | 9 | Active |
| US8349711B2 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Electricity | 4 | Active |
| US8202793B2 | Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same | Electricity | 3 | Active |
| US9263266B2 | Group III nitride articles and methods for making same | Electricity | 1 | Active |
| US8637848B2 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Electricity | 1 | Active |
| US9082890B1 | Group III nitride articles having nucleation layers, transitional layers, and bulk layers | Electricity | 0 | Active |
| US8871556B2 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.