High resistivity silicon carbide
US7727919B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Oct 29, 2007 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | May 1, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9607
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1E5 Ω cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.