PMOS pixel structure with low cross talk for active pixel image sensors
US7728277B2 · kind B2 · utility
21Cited by
15References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2006 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Jun 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1865
Abstract
An image sensor with an image area having a plurality of pixels with each pixel having a photodetector and a substrate of a first conductivity type and a first layer of a second conductivity type formed between the substrate and the photodetectors. The first layer spans the image area and is biased at predetermined potential with respect to the substrate for driving excess carriers into the substrate to reduce cross talk. One or more adjacent active electronic components can be disposed in the first layer within each pixel and electronic circuitry can be disposed in the substrate outside of the image area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.