Semiconductor memory device and phase change memory device
US7728320B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 11, 2006 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | May 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8413
Abstract
A phase change memory (PCM) device includes a substrate, bottom electrodes disposed in the substrate, a first dielectric layer disposed on the substrate, second dielectric layers, third dielectric layers, cup-shaped thermal electrodes, top electrodes, and PC material spacers. In the PCM device, each cup-shaped thermal electrode contacts with each bottom electrode. Second and third dielectric layers are disposed over the substrate in different directions, wherein each of the second and third dielectric layers covers a portion of the area surrounded by each cup-shaped thermal electrode, and the third dielectric layers overlay the second dielectric layers. The top electrodes are disposed on the third dielectric layers, wherein a plurality of stacked structure composed of the third dielectric layers and the top electrodes are formed thereon. The PC material spacers are formed on the sidewalls of each stacked structure and physically and electrically contact the cup-shaped thermal electrodes and the top electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.