Nitride-based semiconductor substrate, method of making the same and epitaxial substrate for nitride-based semiconductor light emitting device
US7728323B2 · kind B2 · utility
1Cited by
2References
8Claims
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Key dates
| Filing date | Oct 4, 2006 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Oct 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based semiconductor substrate has a substrate formed of a nitride-based semiconductor crystal having a mixed crystal composition with three elements or more. The substrate has a diameter of not less than 25 mm, and a thermal resistivity in a range of 0.02 Kcm2/W to 0.5 Kcm2/W in its thickness direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.