ZnO layer and semiconductor light emitting device
US7728347B2 · kind B2 · utility
0Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Apr 23, 2009 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Apr 23, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.