Protective structure for semiconductor sensors

US7728363B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Stephan Sorge · Dresden, DE
• Christian Kunath · Dresden, DE
• Eberhard Kurth · Radebeul, DE

Key dates

• Filing date: Nov 8, 2007
• Grant date: Jun 1, 2010
• Expiry date: Jun 20, 2028

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/414
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.