Semiconductor device with high on current and low leakage

US7728387B1 · kind B1 · utility

Assignee

• The Board of Trustees of the Leland Stanford Junior University · US

Inventors

• Tejas Krishnamohan · Palo Alto, US
• Krishna C. Saraswat · Saratoga, US

Key dates

• Filing date: Jun 12, 2007
• Grant date: Jun 1, 2010
• Expiry date: Sep 12, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

Various semiconductor devices and methods of manufacture are employed. According to an example embodiment of the present invention, a MOS-compatible semiconductor device exhibits high channel mobility and low leakage. The device includes a channel region having a high-mobility strained material layer and a tunneling mitigation layer on the strained material layer to mitigate tunnel leakage. The strained material has a lattice structure that is strained to match the lattice structure of the tunneling mitigation layer. An insulator layer is on the tunneling mitigation layer, and an electrode is over the insulator and adapted to apply a voltage bias to the channel region to switch the device between conductive and nonconductive states. Current is transported in the conductive state as predominantly facilitated via the mobility of the strained material layer, and wherein tunneling current in the nonconductive state is mitigated by the tunneling mitigation layer.