Tejas Krishnamohan
6Patents
5h-index
18Co-inventors
52Inventor score
Filing activity: Jun 12, 2007 → Aug 19, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8228743B2 | Memory cells containing charge-trapping zones | Emerging Cross-Sectional Technologies | 42 | Active |
| US7898850B2 | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells | Emerging Cross-Sectional Technologies | 18 | Active |
| US7728387B1 | Semiconductor device with high on current and low leakage | Electricity | 12 | Active |
| US8514624B2 | In-field block retiring | Physics | 7 | Active |
| US8767467B2 | In-field block retiring | Physics | 5 | Active |
| US7989289B2 | Floating gate structures | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.