Patent · US Active

Semiconductor device and method of cutting electrical fuse

US7728407B2 · kind B2 · utility

4Cited by
1References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 16, 2007
Grant dateJun 1, 2010
Priority date
Expiry dateApr 26, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor substrate, and an electrical fuse including a first conductor including a first cutting target region, and a second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on the semiconductor substrate, wherein a flowing-out region is formed of the first conductor flowing toward outside between the first cutting target region and the second cutting target region in a condition of cutting the electrical fuse.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.