Semiconductor power device with bias circuit
US7728671B2 · kind B2 · utility
4Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2008 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Jul 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF power circuit comprises a power transistor having a gate and drain, an output matching network coupled to the drain and an input matching network coupled to the gate. A closed-loop bias circuit is integrated with the power transistor on the same die and coupled to the gate for biasing the RF power transistor based on a reference voltage applied to the bias circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.