Non-volatile memory device, method of operating the same, and method of fabricating the same
US7729164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2008 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Jul 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device may include at least one semiconductor layer, a plurality of control gate electrodes, a plurality of charge storage layers, at least one first auxiliary electrode, and/or at least one second auxiliary electrode. The plurality of control gate electrodes may be recessed into the semiconductor layer. The plurality of charge storage layers may be between the plurality of control gate electrodes and the semiconductor layer. The first and second auxiliary electrodes may be arranged to face each other. The plurality of control gate electrodes may be between the first and second auxiliary electrodes and capacitively coupled with the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.