Manufacturing apparatus of magnetoresistance elements
US7731825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2005 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Oct 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10−3 Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.