Photomask with overlay mark and method of fabricating semiconductor device
US7732105B2 · kind B2 · utility
1Cited by
3References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Nov 24, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a photomask and a method of fabricating a semiconductor device. The photomask includes a photomask substrate including a chip region and a scribe lane region, with an overlay mark formed in the scribe lane region. The overlay mark includes one or more sub-overlay marks. Each of the sub-overlay marks includes a plurality of unit regions sequentially connected to each other and having different widths, where the width of a given unit region is constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.