Patent · US Active

Methods for etching devices used in lithography

US7732106B2 · kind B2 · utility

1Cited by
14References
18Claims
0Family size

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Key dates

Filing dateOct 20, 2008
Grant dateJun 8, 2010
Priority date—
Expiry dateOct 20, 2028

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70433
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Methods for etching devices used for lithography. In one aspect, a method includes etching, in a single etch, a first region and a second region on a substrate. The first region is to attenuate an intensity of the zero diffraction order of a radiation for patterning of a microelectronic device to a first extent. The second region is to attenuate the intensity of the zero diffraction order of the radiation to a second extent. The second extent being sufficiently different from the first extent to improve a quality of the patterned microelectronic device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.