Patent · US Active

Quantum dot based optoelectronic device and method of making same

US7732237B2 · kind B2 · utility

27Cited by
10References
11Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 27, 2005
Grant dateJun 8, 2010
Priority date—
Expiry dateSep 13, 2026

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/951
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method of forming an optically active region on a silicon substrate includes the steps of epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therein, the quantum dots being formed from a compound semiconductor material having a lattice mismatch with the silicon buffer layer. The optically active region may be incorporated into devices such as light emitting diodes, laser diodes, and photodetectors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.