Method of making a semiconductor device having a multicomponent oxide
US7732251B2 · kind B2 · utility
254Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Jun 3, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T408/5633
Abstract
One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.