Method of ultra-shallow junction formation using Si film alloyed with carbon
US7732269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Mar 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.