Method for recycling of ion implantation monitor wafers
US7732303B2 · kind B2 · utility
1Cited by
5References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2008 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | May 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of recycling monitor wafers. The method includes: (a) providing a semiconductor wafer which includes a dopant layer extending from a top surface of the wafer into the wafer a distance less than a thickness of the wafer, the dopant layer containing dopant species; after (a), (b) attaching an adhesive tape to a bottom surface of the wafer; after (b), (c) removing the dopant layer; and after (c), (d) removing the adhesive tape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.