Patent · US Active

Methods for producing improved epitaxial materials

US7732306B2 · kind B2 · utility

21Cited by

5References

23Claims

0Family size

Assignee

S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

Chantal Arena · Mesa, US
Subhash Mahajan · Tempe, US
Ranjan Datta · Bengaluru, IN

Key dates

Filing date	Jul 25, 2008
Grant date	Jun 8, 2010
Priority date	—
Expiry date	Nov 21, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02647
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This invention provides methods for fabricating substantially continuous layers of group III nitride semiconductor materials having low defect densities. The methods include epitaxial growth of nucleation layers on a base substrate, thermally treatment of said nucleation layer and epitaxial growth of a discontinuous masking layer. The methods outlined promote defect reduction through masking, annihilation and coalescence, therefore producing semiconductor structures with low defect densities. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.