Process for depositing layers containing silicon and germanium

US7732308B2 · kind B2 · utility

Assignee

• Aixtron, Inc. · DE

Inventors

• Marcus Schumacher · Kerpen, DE
• Peter Baumann · Tirschenreuth, DE
• Johannes Lindner · Roetgen, DE
• Timothy McEntee · Milpitas, US

Key dates

• Filing date: Feb 22, 2005
• Grant date: Jun 8, 2010
• Expiry date: Jul 15, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/933
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.