Method for manufacturing the shallow trench isolation structure
US7732337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Aug 6, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a shallow trench isolation (STI) structure is provided. In the method, a substrate is initially provided. Then, a patterned pad layer and a patterned mask layer are successively formed in order on the substrate. After that, a portion of the substrate is removed by using the patterned mask layer and the patterned pad layer as a mask to form trenches in the substrate. Next, a first insulation layer is formed in the trenches. Afterwards, a protection layer is conformally formed on the substrate. Then, a second insulation layer is formed on the protection layer above the first insulation layer. Next, the patterned mask layer and the patterned pad layer are removed. Finally, a portion of the protection layer and the second insulation layer are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.