Method of fabricating semiconductor device with reduced pitch
US7732338B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 2008 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Oct 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes depositing a first film on a workpiece film so that a resist is formed on the first film, processing the first film with the resist serving as a mask, depositing a second film along the first film, processing the second film so that the second film is left only on a sidewall of the first film, depositing a third film on the substrate, exposing a sidewall of the second film, depositing a fourth film along the sidewall and an upper surface of the third film, removing the fourth film except for only its part on the sidewall of the second film, depositing a fifth film on the substrate, planarizing the second to fifth films so that the upper surfaces of the films are exposed, and processing the workpiece film while the second and fifth films serve as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.