Chemical vapor deposition of TiN films in a batch reactor
US7732350B2 · kind B2 · utility
14Cited by
113References
20Claims
0Family size
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Key dates
| Filing date | Dec 4, 2006 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Mar 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.