Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US7732881B2 · kind B2 · utility
119Cited by
51References
29Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Jul 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention includes a memory element having a composite free layer including a first free sub-layer formed on top of the bottom electrode, a nano-current-channel (NCC) layer formed on top of the first free sub-layer, and a second free sub-layer formed on top of the NCC layer, wherein when switching current is applied to the memory element, in a direction that is substantially perpendicular to the layers of the memory element, local magnetic moments of the NCC layer switch the state of the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.