Patent assignee · US · COMPANY

Avalanche Technology, Inc.

298Patents
298Active
298Granted
59Portfolio score

Filing activity: Feb 12, 2007 → Mar 22, 2025 · 20 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US8772888B2 MTJ MRAM with stud patterning Electricity 220 Active
US8574928B2 MRAM fabrication method with sidewall cleaning Electricity 124 Active
US7732881B2 Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM) Electricity 119 Active
US8535952B2 Method for manufacturing non-volatile magnetic memory Electricity 117 Active
US8422286B2 Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (STTMRAM) Emerging Cross-Sectional Technologies 81 Active
US8120949B2 Low-cost non-volatile flash-RAM memory Electricity 74 Active
US8883520B2 Redeposition control in MRAM fabrication process Electricity 64 Active
US8802451B2 Method for manufacturing high density non-volatile magnetic memory Physics 58 Active
US8792269B1 Fast programming of magnetic random access memory (MRAM) Physics 57 Active
US8623452B2 Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same Emerging Cross-Sectional Technologies 46 Active
US9793319B2 Multilayered seed structure for perpendicular MTJ memory element Electricity 44 Active
US8542524B2 Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement Electricity 42 Active
US8477530B2 Non-uniform switching based non-volatile magnetic based memory Electricity 40 Active
US9166154B2 MTJ stack and bottom electrode patterning process with ion beam etching using a single mask Electricity 39 Active
US9070855B2 Magnetic random access memory having perpendicular enhancement layer Electricity 37 Active
US9608038B2 Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer Electricity 37 Active
US9196332B2 Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer Electricity 36 Active
US8559215B2 Perpendicular magnetic random access memory (MRAM) device with a stable reference cell Emerging Cross-Sectional Technologies 34 Active
US9037786B2 Storage system employing MRAM and array of solid state disks with integrated switch Physics 34 Active
US9780300B2 Magnetic memory element with composite perpendicular enhancement layer Performing Operations; Transporting 34 Active
US8508984B2 Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof Electricity 31 Active
US8966164B1 Storage processor managing NVME logically addressed solid state disk array Physics 30 Active
US8779537B2 Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer Electricity 28 Active
US8018011B2 Low cost multi-state magnetic memory Physics 28 Active
US9166143B1 Magnetic random access memory with multiple free layers Physics 25 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.