Schottky junction diode devices in CMOS
US7732887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2006 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Dec 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped to a second conductivity type opposite that of the first conductivity type. A region of metal-containing material is disposed over the first well to form a Schottky junction at an interface between the region of metal-containing material and the first well. In one embodiment, a first well contact is disposed in a portion of the first well. A second well is disposed over the substrate wherein the second well includes a material doped to the first conductivity type. In one embodiment, the first well and the second well are not in direct contact with one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.