Electrical fuse structure for higher post-programming resistance
US7732893B2 · kind B2 · utility
6Cited by
33References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Apr 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.