Voltage clamp circuit and semiconductor device, overcurrent protection circuit, voltage measurement probe, voltage measurement device and semiconductor evaluation device respectively using the same
US7733105B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2008 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Aug 1, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a voltage clamp circuit, a normally-on type field-effect transistor having a negative threshold voltage has a drain connected to an input node, a source connected to an output node and grounded via a resistance element, and a gate supplied with an output voltage of a variable direct-current power supply. When a voltage at the output node becomes higher than a clamping voltage because of voltage drop of the resistance element, the field-effect transistor is tuned off. Accordingly, the output voltage is limited to be at most the clamping voltage. Thus, a response speed is higher than those of conventional voltage clamp circuits using diodes or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.