Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained
US7736919B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2006 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Mar 21, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/932
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.