Method of forming semiconductor device
US7736989B2 · kind B2 · utility
1Cited by
0References
19Claims
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Assignee
Inventors
Key dates
| Filing date | Jul 21, 2008 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Aug 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device, where the method may include forming a first trench in a semiconductor substrate, forming first device isolation patterns that fill the first trench, forming spacers on sidewalls of the first device isolation patterns, forming a second trench in the semiconductor substrate between first device isolation patterns, and forming second device isolation patterns that fill the second trench. The second trench is formed using an etching process adopting the first device isolation pattern and the spacer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.