Silicon-on insulator substrate and method for manufacturing the same
US7736998B2 · kind B2 · utility
8Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2005 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Jul 22, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This SOI substrate includes a base substrate which includes a single-crystal semiconductor and an active layer which includes a single-crystal semiconductor and is bonded to the base substrate with an oxide film therebetween. The oxide film is formed only in the active layer. The active layer is formed with a thickness of 10 to 200 nm and a thickness variation throughout the active layer of 1.5 nm or less by etching a surface of the active layer while selectively using only the reactive radicals generated by a plasma etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.