Patent · US Active

Contact formation

US7737022B2 · kind B2 · utility

4Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 11, 2009
Grant dateJun 15, 2010
Priority date
Expiry dateMar 11, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure includes various method, circuit, device, and system embodiments. One such method embodiment includes creating a trench in an insulator stack material having a portion of the trench positioned between two of a number of gates and depositing a spacer material to at least one side surface of the trench. This method also includes depositing a conductive material into the trench and depositing a cap material into the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.