Method of fabricating a nitrided silicon oxide gate dielectric layer

US7737050B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Edward D. Adams · South Burlington, US
• Jay Burnham · Fletcher, US
• Evgeni Gousev · Saratoga, US
• James S. Nakos · Saint Johnsbury Center, US
• Heather Elizabeth Preuss · Colchester, US
• Joseph F. Shepard, Jr. · Hopewell Junction, US

Key dates

• Filing date: Oct 30, 2006
• Grant date: Jun 15, 2010
• Expiry date: Jun 13, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02238
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.