Jay Burnham
20Patents
6h-index
38Co-inventors
65Inventor score
Filing activity: Jan 9, 1998 → Dec 21, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5947053A | Wear-through detector for multilayered parts and methods of using same | Electricity | 34 | Expired |
| US7138691B2 | Selective nitridation of gate oxides | Electricity | 21 | Expired |
| US6780720B2 | Method for fabricating a nitrided silicon-oxide gate dielectric | Electricity | 18 | Expired |
| US6521977B1 | Deuterium reservoirs and ingress paths | Electricity | 16 | Expired |
| US7291568B2 | Method for fabricating a nitrided silicon-oxide gate dielectric | Electricity | 8 | Expired |
| US6770501B2 | Deuterium reservoirs and ingress paths | Electricity | 7 | Expired |
| US6706644B2 | Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors | Electricity | 5 | Expired |
| US7342290B2 | Semiconductor metal contamination reduction for ultra-thin gate dielectrics | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6838396B2 | Bilayer ultra-thin gate dielectric and process for semiconductor metal contamination reduction | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7759260B2 | Selective nitridation of gate oxides | Electricity | 4 | Active |
| US8912091B2 | Backside metal ground plane with improved metal adhesion and design structures | Electricity | 1 | Active |
| US7888142B2 | Copper contamination detection method and system for monitoring copper contamination | Electricity | 1 | Active |
| US7957917B2 | Copper contamination detection method and system for monitoring copper contamination | Electricity | 0 | Active |
| US8758962B2 | Method and apparatus for sub-pellicle defect reduction on photomasks | Physics | 0 | Active |
| US9953831B1 | Device structures with multiple nitrided layers | Electricity | 0 | Active |
| US6909157B2 | Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors | Electricity | 0 | Expired |
| US7737050B2 | Method of fabricating a nitrided silicon oxide gate dielectric layer | Electricity | 0 | Active |
| US8236580B2 | Copper contamination detection method and system for monitoring copper contamination | Electricity | 0 | Active |
| US8173331B2 | Method and apparatus for sub-pellicle defect reduction on photomasks | Physics | 0 | Active |
| US8709887B2 | Method for fabricating a nitrided silicon-oxide gate dielectric | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.